| Numéro |
J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-261 - Pr9-264 | |
| DOI | https://doi.org/10.1051/jp4:1998951 | |
EMIF 2
J. Phys. IV France 08 (1998) Pr9-261-Pr9-264
DOI: 10.1051/jp4:1998951
Pulsed laser deposition of relaxor ferroelectric films
M. Tyunina1, 2, J. Levoska1, A. Sternberg2, V. Zauls2, M. Kundzinsh2, I. Shorubalko2 and S. Leppavuori11 Microelectronics and Material Physics Laboratories and EMPART Research Group of Infotech Oulu, University of Oulu, PL 444, 90571 Oulu, Finland
2 Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063 Riga, Latvia
Abstract
Heterostructures of perovskite relaxor ferroelectric (RFE) thin films onto La0.5Sr0.5CoO3, bottom electrode layers were grown by pulsed laser deposition on MgO(100) crystal substrates. The films were highly oriented, with (h00) planes parallel to the substrate surface, and demonstrated good dielectric and ferroelectric quality at room temperature. The studies of the dielectric properties of the films over the frequency range of 20 Hz .... 100 kHz and over the temperature range of 0...350°C revealed relaxor type behavior in the films. A diffuse ferroelectric phase transition and a shift of the maximum dielectric permittivity towards higher temperatures with increasing frequency were observed. Interferometric measurements of piezoelectric response of the heterostructures at room temperature yielded piezoelectric coefficients in the range of 25 ... 60 pm/V at 1 kHz, increasing up to 200 ... 250 pm/V at 60 Hz. The obtained results look promising for micromechanical applications of RFE thin films.
© EDP Sciences 1998