J. Phys. IV France
Volume 08, Numéro PR9, December 19982nd European Meeting on Integrated Ferroelectrics
|Page(s)||Pr9-243 - Pr9-246|
J. Phys. IV France 08 (1998) Pr9-243-Pr9-246
Influence of PbTiO3 buffer layer on structural and electrical properties of Pb(Zr, Ti)O3 films produced by sputter deposition techniqueG. Vélu, B. Jaber, T. Haccart and D. Rèmiens
Laboratoire des Matériaux Avancés Céramiques (LAMAC) - CRlTT "Céramiques Fines", Université de Valenciennes et du Hainaut-Cambrésis, Z.I. Champ de l'Abbesse, 59600 Maubeuge, France
Ferroelectric lead zirconate titanate (PZT) with very thin lead titanate (PT) buffer layer inserted between the PZT films and the Si/SiO2/Ti/Pt substrate have been deposited by r.f. magnetron sputtering. Insertion of a PT buffer layer was found to exert marked effects on the PZT films in terms of structure, microstructure and electrical properties. The orientation of PZT thin films was controlled by changing the orientation of the PT layer. The (111) - oriented and (100) - oriented PZT films were grown on the (111) oriented and the (001) and (100) mixed - oriented PT buffer layers, respectively. The influence of the buffer layer thickness and the orientation of the PZT films on the electrical properties was also investigated.
© EDP Sciences 1998