J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-229 - Pr9-232
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-229-Pr9-232

DOI: 10.1051/jp4:1998944

Effect of poling treatment on e31 piezoelectric constant of sputtered PZT thin films

E. Cattan, A. Mollier, G. Velu and D. Remiens

Laboratoire des Matériaux Avancés Céramiques/CRITT "Céramiques Fines", Université de Valenciennes et du Hainaut Cambrésis, Z.I. du Champ de l'Abbesse, 59600 Maubeuge, France

Pb(Zr,Ti)O3 (PZT) is a material of great interest due to its intrinsic properties : ferroelectricity and consequently piezoelectricity. It is very attractive in deformation sensors or transducers of surface and bulk acoustic wave and also in micromechanical applications. In thin film form, there has been no systematic study of the poling effect on the piezoelectric properties of PZT ; our system of measurement of the direct piezoelectric effect allows it. Films of thicknesses in range of 3 µm are studied. The piezoelectric response of films has been evaluated function of the poling treatment and we have registered the piezoelectric hysteresis loop. They were initially piezoelectric which causes the offset of the piezoelectric hysteresis loops. We discuss here the time necessary to polarize the film with a dc bias and show that an efficient poling of the films can be achieved at room temperature under the field of 120 kV/cm. The maximum and the remanent piezoelectric constants, measured in this configuration are respectively -2.5 C/m2 and -2 C/m2.

© EDP Sciences 1998