| Numéro |
J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-225 - Pr9-228 | |
| DOI | https://doi.org/10.1051/jp4:1998943 | |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-225-Pr9-228
DOI: 10.1051/jp4:1998943
Laboratoire de Matériaux Céramiques et Traitements de Surface, ESA 6015, Université de Limoges, Faculté des Sciences, 123 avenue Albert Thomas, 87060 Limoges cedex, France
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-225-Pr9-228
DOI: 10.1051/jp4:1998943
SrBi2Nb2O9 ferroelectric thin films
J.H. Yi, P. Thomas, M. Manier, J.P. Mercurio, I. Jauberteau and B. FritLaboratoire de Matériaux Céramiques et Traitements de Surface, ESA 6015, Université de Limoges, Faculté des Sciences, 123 avenue Albert Thomas, 87060 Limoges cedex, France
Abstract
Stable sols or gels with SrBi2Nb2O9 composition were obtained from mixtures of niobium ethoxide, bismuth and strontium 2-ethylhexanoates. SrBi2Nb2O9 thin films were prepared by spin-coating a stable precursor solution on Si/SiO2/TiO2/Pt substrates. Randomly oriented 0.3 µm-thick crack-free films were obtained after 10 successive depositions and an heat-treatment of 2 hours at 700°C. Crystallisation occurs at about 550 °C and a pure SrBi2NB2O9 phase is obtained at 600°C. P-E hysteresis loops have confirmed the ferroelectric behaviour of the films : they show a remanent polarisation of 2.5 µC/cm2. No fatigue was observed up to 109 full switching.
© EDP Sciences 1998