J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-205 - Pr9-208
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-205-Pr9-208

DOI: 10.1051/jp4:1998938

Switching quality of thin-film PZT ferroelectric capacitors

D.J. Wouters1, R. Nouwen2, G.J. Norga1, A. Bartic1, L. Van Poucke2 and H.E. Maes1

1  IMEC, Kapeldreef 75, 3001 Leuven, Belgium
2  Limburg University Center, 3590 Diepenbeek, Belgium

The switching quality of PZT thin-film ferroelectric capacitors was studied, using hysteresis and pulse switching measurements. The ferroelectric properties of epitaxial Pt/PZT/LSCO/MgO capacitors are strongly affected by the LSCO material. A strong deviation between hysteresis and pulse measurements has been observed for one type of LSCO, corresponding to a strong relaxation of (oxygen-vacancy) space charge polarization. On the other hand, polycrystalline Pt/PZT/Pt show very rectangular hysteresis loops with high Pr and pulse measurements reveal high speed switching and absence of rapid depolarization effects. These results prove the very high switching quality of Pt/PZT/Pt capacitors, required for their application as non-volatile memory elements.

© EDP Sciences 1998