Switching quality of thin-film PZT ferroelectric capacitors

D.J. Wouters; R. Nouwen; G.J. Norga; A. Bartic; L. Van Poucke; H.E. Maes

doi:doi:10.1051/jp4:1998938

Numéro		J. Phys. IV France Volume 08, Numéro PR9, December 1998 2^nd European Meeting on Integrated Ferroelectrics EMIF 2


Page(s)		Pr9-205 - Pr9-208
DOI		https://doi.org/10.1051/jp4:1998938

2^nd European Meeting on Integrated Ferroelectrics
EMIF 2

J. Phys. IV France 08 (1998) Pr9-205-Pr9-208
DOI: 10.1051/jp4:1998938

Switching quality of thin-film PZT ferroelectric capacitors

D.J. Wouters¹, R. Nouwen², G.J. Norga¹, A. Bartic¹, L. Van Poucke² and H.E. Maes¹

¹ IMEC, Kapeldreef 75, 3001 Leuven, Belgium
² Limburg University Center, 3590 Diepenbeek, Belgium

Abstract
The switching quality of PZT thin-film ferroelectric capacitors was studied, using hysteresis and pulse switching measurements. The ferroelectric properties of epitaxial Pt/PZT/LSCO/MgO capacitors are strongly affected by the LSCO material. A strong deviation between hysteresis and pulse measurements has been observed for one type of LSCO, corresponding to a strong relaxation of (oxygen-vacancy) space charge polarization. On the other hand, polycrystalline Pt/PZT/Pt show very rectangular hysteresis loops with high P_r and pulse measurements reveal high speed switching and absence of rapid depolarization effects. These results prove the very high switching quality of Pt/PZT/Pt capacitors, required for their application as non-volatile memory elements.