J. Phys. IV France
Volume 08, Numéro PR9, December 19982nd European Meeting on Integrated Ferroelectrics
|Page(s)||Pr9-101 - Pr9-104|
J. Phys. IV France 08 (1998) Pr9-101-Pr9-104
Photoelectric effects in chemical solution deposited Bi4Ti3O12 thin filmsL. Pintilie1, M. Alexe2, A. Pignolet2 and D. Hesse2
1 Nátional Institute of Materials Physics, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania.
2 Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle/Saale, Germany
Bismuth titanate ferroelectric thin films were deposited on platinum coated silicon using chemical solution deposition. Photoconductive and photovoltaic effects were observed both in continuous and modulated light. With the increasing of the annealing temperature the maximum of the photoconductive signal spectral distribution is moving toward longer wavelengths, from 340 nm to 370 nm. The existence of the photovoltaic effect could be due to some potential barriers existing at the grain boundaries and the enlargement of its spectral distribution toward longer wavelengths could be due to the presence of some traps at the grain boundaries.
© EDP Sciences 1998