J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-49 - Pr9-52
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-49-Pr9-52

DOI: 10.1051/jp4:1998906

Influence of processing parameters on characteristics of sol-gel derived PLZT thin films

B. Malic1, N. Setter2, K. Brooks2, M. Kosec1 and G. Drazic1

1  Jozef Stefan Institute, Jamova 39, 1001 Ljubljana, Slovenia.
2  Laboratoire de Céramique, École Polytechnique Fédérale de Lausanne, Ecublens, 1015 Lausanne, Switzerland

PLZT x/65/35 (x = 4, 8, 10) thin films were prepared by the acetic-acid based chemical solution deposition processing from lead tetraacetate, lanthanum nitrate and zirconium and titanium propoxides. Introducing top layer of PLZT with large PbO excess can prevent surface pyrochlore phase formation. It is further show that although lead is depleted from PLZT because of the reaction with the substrate, perovskite phase is retained as a consequence of a large lead-oxide content throughout the film.

© EDP Sciences 1998