| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-113 - Pr3-116 | |
| DOI | https://doi.org/10.1051/jp4:1998326 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-113-Pr3-116
DOI: 10.1051/jp4:1998326
1 METRONIK, Stegne 21, 1000 Ljubljana, Slovenia
2 Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, 1000 Ljubljana, Slovenia
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-113-Pr3-116
DOI: 10.1051/jp4:1998326
Band tails and their influence on the performance of bipolar SiGe devices at low temperatures
S. Sokolic1, B. Ferk2 and S. Amon21 METRONIK, Stegne 21, 1000 Ljubljana, Slovenia
2 Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, 1000 Ljubljana, Slovenia
Abstract
Based on theoretical and experimental studies of band tails in silicon found in the literature, the influence of band tails on electrical properties of p-type SiGe is analyzed. The consideration of the band tail influence for the purposes of device modeling is suggested. The relationship between band tails and apparent bandgap narrowing is discussed. The proposal for experimental validation of effective bandgap shift due to band tails is given.
© EDP Sciences 1998