| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-117 - Pr3-120 | |
| DOI | https://doi.org/10.1051/jp4:1998327 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-117-Pr3-120
DOI: 10.1051/jp4:1998327
1 METRONIK, Stegne 21, 1000 Ljubljana, Slovenia
2 Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, 1000 Ljubljana, Slovenia
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-117-Pr3-120
DOI: 10.1051/jp4:1998327
SiGe HBT simulation based on mp* (T, NA, xGE) numerical model HEM
S. Sokolic1, B. Ferk2 and S. Amon21 METRONIK, Stegne 21, 1000 Ljubljana, Slovenia
2 Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, 1000 Ljubljana, Slovenia
Abstract
Modeling of effective densities of states NV,SiGE in heterojunction bipolar transistor is presented, based on accurate determination of hole effective mass mp *. Algorithm for calculation of hole effective mass mp* is presented, which is optimized for numerical device modeling. Corresponding Fortran subroutine named HEM is discussed, which calculates hole effective mass in the temperature range of T=77K-300K, base doping level bellow 1020 cm-3 and germanium content xGe=0,00-0,30. Finally, Fortran subroutine HEM is incorporated into numerical device simulator MEDICI and tested through simulation of idealized heterojunction bipolar transistor.
© EDP Sciences 1998