| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-99 - Pr3-102 | |
| DOI | https://doi.org/10.1051/jp4:1998323 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-99-Pr3-102
DOI: 10.1051/jp4:1998323
1 Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Aubum University, Aubum AL 36849, U.S.A.
2 Naval Surface Warfare Center, Crane IN 47522, U.S.A.
3 IBM Microelectronics, Hopewell Junction, NY 12533, U.S.A.
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-99-Pr3-102
DOI: 10.1051/jp4:1998323
Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures
J.M. Roldán1, J.D. Cressler1, G. Niu1, S.D. Clark2 and D. Nguyen-Ngoc31 Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Aubum University, Aubum AL 36849, U.S.A.
2 Naval Surface Warfare Center, Crane IN 47522, U.S.A.
3 IBM Microelectronics, Hopewell Junction, NY 12533, U.S.A.
Abstract
This paper presents for the first time the effects of ionizing gamma rays on a high-performance UHV/CVD SiGe BiCMOS technology irradiated at both 300K and 77K. The SiGe HBTs show a degradation in current gain below 10% at 300K and no observable shifts in current gain at 77K. The Si pFETs are radiation hard to 1.0 Mrad(Si) at both 300K and 77K, while the Si nFETs are able to withstand 100 krad(Si). In this work, we examine the total dose response of SiGe HBTs and concentrate on the post-radiation behavior of the nFETs and pFETs irradiated under bias at both 300K and 77K.
© EDP Sciences 1998