Numéro
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
Page(s) Pr3-67 - Pr3-70
DOI https://doi.org/10.1051/jp4:1998316
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3

J. Phys. IV France 08 (1998) Pr3-67-Pr3-70

DOI: 10.1051/jp4:1998316

Modeling of the low temperature electron distribution function in ultra-fast transient situations for semiconductor devices

M.-C. Cheng

Department of Electrical Engineering and Advanced Materials Research Institute, University of New Orleans, LA 70148, U.S.A.


Abstract
A physics-based approach to the distribution function derived from the evolution of the distribution function as a result of scattering is presented. Instead of solving the Boltzmann transport equations or using the Monte Carlo simulation, the non-equilibrium distribution function can be determined efficiently using the physics-based approach. The approach is applied to model the non-equilibrium distribution function accounting for highly Non-Maxwellian effects at low temperature. Study shows that at low temperature the relatively weak scattering substantially enhances the non-Maxwellian nature of the electron distribution function. The Non-Maxwellian behavior at low temperature can be taken into account in the presented approach when the velocity relaxation is properly included in the model.



© EDP Sciences 1998