Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

J.B. Roldán; F. Gámiz; J.A. López-Villanueva; J.E. Carceller

doi:doi:10.1051/jp4:1998314

Numéro		J. Phys. IV France Volume 08, Numéro PR3, June 1998 Proceedings of the 3^rd European Workshop on Low Temperature Electronics WOLTE 3


Page(s)		Pr3-57 - Pr3-60
DOI		https://doi.org/10.1051/jp4:1998314

Proceedings of the 3^rd European Workshop on Low Temperature Electronics
WOLTE 3

J. Phys. IV France 08 (1998) Pr3-57-Pr3-60
DOI: 10.1051/jp4:1998314

Low temperature mobility improvement in high-mobility strained-Si/Si_1-xGe_x multilayer MOSFETs

J.B. Roldán, F. Gámiz, J.A. López-Villanueva and J.E. Carceller

Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain

Abstract
Electron density and mobility curves have been simulated for buried strained-Si/SiGe MOSFET. A Monte Carlo simulator including electron quantization, nonparabolicity and a new model for Coulomb scattering has been used at different temperatures. It has been demonstrated that the improved confinement of the electron charge in the strained-Si quantum well at low temperatures greatly reduces Coulomb scattering in these structures. The inversion charge in the superficial channel is reduced in comparison with operation at room temperature. Therefore, apart from lower Coulomb scattering rates, surface-roughness and phonon scattering is also lower.