J. Phys. IV France
Volume 08, Numéro PR3, June 1998Proceedings of the 3rd European Workshop on Low Temperature Electronics
|Page(s)||Pr3-57 - Pr3-60|
J. Phys. IV France 08 (1998) Pr3-57-Pr3-60
Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETsJ.B. Roldán, F. Gámiz, J.A. López-Villanueva and J.E. Carceller
Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain
Electron density and mobility curves have been simulated for buried strained-Si/SiGe MOSFET. A Monte Carlo simulator including electron quantization, nonparabolicity and a new model for Coulomb scattering has been used at different temperatures. It has been demonstrated that the improved confinement of the electron charge in the strained-Si quantum well at low temperatures greatly reduces Coulomb scattering in these structures. The inversion charge in the superficial channel is reduced in comparison with operation at room temperature. Therefore, apart from lower Coulomb scattering rates, surface-roughness and phonon scattering is also lower.
© EDP Sciences 1998