Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-21-C2-29
DOI: 10.1051/jp4/1997004

High Resolution, High Speed Detectors with Integrated JFET Electronics

L. Striider¹, S. Eckbauer¹, R. Hartmann¹, D. Hauff¹, P. Holl², J. Kemmer², P. Lechner⁰, N. Meidinger¹, R. Richter¹, H. Soltau², C.V. Zanthier³, C. Fiorini⁴, E. Gatti⁴, A. Longoni⁵ and M. Sampietro<sup>4

1</sup>  MPI fur Extraterrestrische Physik, Halbleiterlabor ; Paul-Gerhardt-Allee 42, D - 81245 München, Germany
²  KETEK GmbH, Am Isarbach 30, D - 85764 Oberschleissheim, Germany
³  KETEK GmbH, Am Isarbach 30, D. 85764 Oberschleissheim, Germany
⁴  Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milan, Italy
⁵  Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milan Italy

Abstract
For the European X-ray Multi-Mirror mission (XMM) and the German X-ray satellite ABRIXAS fully depleted pn-CCDs have been fabricated, enabling high speed, low noise, position resolving X-ray spectroscopy. The detector was designed and fabricated with a homogeneously sensitive area of 36 cm² . At 150 K it has a noise of 5 e^- rms only, with a readout time of the total focal plane array of 4 ms. The maximum count rate for single photon counting was 100.000 cps under flat field conditions. Its position resolution is in the order of 100 µm. The quantum efficiency is higher than 60% from 50 eV up to 15 keV. In addition, new cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface generated leakage current. At count rates as high as 1.000.000 counts per s and per cm² , they still show excellent spectroscopic behaviour at room temperature operation.

© EDP Sciences 1997