Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-337-C2-338
DOI: 10.1051/jp4/1997219

High Resolution Silicon Drift Detector Array Designed for XAFS Spectroscopy

Ch. Gauthier¹, J. Goulon¹, E. Moguiline², C. Fiorini³, A. Longoni³, M. Sampietro³, P. Lechner⁴, L. Strüder⁵ and A.H. Walenta<sup>6

1</sup>  European Synchrotron Radiation Facility, avenue des Martyrs, BP. 220, 38043 Grenoble cedex, France
²  European Synchrotron Radiation Facility, avenue des Martyrs, BP. 220, 38043 Grenoble cedex France
³  Politecnico di Milano, Dipartimento di Elettronica e Informazione, Piazza L. da Vinci 32, 20133 Milano, Italy
⁴  MPI für Extraterrestriche Physik, Halbleiterlabor, Paul-Gerhardt-Allee 42, 81245 Munchen, Germany
⁵  MPI für Extraterrestriche Physik, Halbleiterlabor, Paul-Gerhardt-Allee 42, 81245 Munchen Germany
⁶  Universität Gesamthochschule Siegen, F.B. 7, Physik, Adolf Reichwein-Str. 2, 57068 Siegen, Germany

Abstract
We have analyzed the performances of an array of 6 silicon drift detectors with on chip integrated JFET's for XAFS spectroscopy. The key advantage of these detectors is that they combine a very good energy resolution together with high counting rates: at 150 K the energy resolution was 139 eV FWHM at 5.89 keV with a 5 µs gaussian shaping time constant whereas it was still 152 eV FWHM for 0.5 µs time constant Macrocyclic complexes of Ce (III) were used as test samples. We also explored whether or not the energy discrimination between the L_α, L_β fluorescence lines could allow us to get rid the unwanted Ln edge signature that is spoiling the L_III edge EXAFS oscillations.

© EDP Sciences 1997