| Numéro |
J. Phys. IV France
Volume 06, Numéro C5, Septembre 1996
International Field Emission SocietyIFES'96 Proceedings of the 43rd International Field Emission Symposium |
|
|---|---|---|
| Page(s) | C5-173 - C5-177 | |
| DOI | https://doi.org/10.1051/jp4:1996528 | |
International Field Emission Society
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-173-C5-177
DOI: 10.1051/jp4:1996528
1 Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
2 Chemistry Department, Nagoya University, Nagoya 464-01, Japan
© EDP Sciences 1996
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-173-C5-177
DOI: 10.1051/jp4:1996528
Fullerene (C60) Adsorption and Films Growth on the (√3x√3) and (3x3) Surface of 6H SiC(0001)
L. Li1, Y. Hasegawa1, H. Shinohara2 and T. Sakurai11 Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
2 Chemistry Department, Nagoya University, Nagoya 464-01, Japan
Abstract
Scanning tunneling microscopy (STM) was used to study the C60 adsorption on the Si rich (3x3) and C rich (√3x√3) surface of 6H-SiC(0001). At room temperature, triangular or hexagonal islands commensurating to the substrate structure at submonlayer coverages were observed. One of the interesting observations was the nucleation of the second layer of the C60 molecules even at submonlayer coverages. On the (3x3) surface, multilayer growth of C60 with the close-packed fcc(111) structure was observed : while on the (√3x√3) surface, for coverage higher than 1 ML, disordered surface morphology was observed. Epitaxial growth of SiC was also achieved using C60 as carbon source on 6H-SiC(0001) surfaces.
© EDP Sciences 1996