Numéro
J. Phys. IV France
Volume 06, Numéro C5, Septembre 1996
International Field Emission Society
IFES'96
Proceedings of the 43rd International Field Emission Symposium
Page(s) C5-125 - C5-128
DOI https://doi.org/10.1051/jp4:1996520
International Field Emission Society
IFES'96
Proceedings of the 43rd International Field Emission Symposium

J. Phys. IV France 06 (1996) C5-125-C5-128

DOI: 10.1051/jp4:1996520

Single Atom Electron Emission from the Silicon Tip Coated by Calcium Fluoride with Samarium Dopant Ions

V.N. Konopsky, S.K. Sekatskii and V.S. Letokhov

Institute of Spectroscopy, 142092 Troitsk, Moscow Region, Russia


Abstract
We present the first experimental results of the studying of field electron emission from sharp silicon tips covered by thin dielectric CaF2 layers containing Sm dopant ions. Some indications on the resonant tunneling of electrons from sharp silicon tip through dopant samarium ions inside the coating have been observed, which can be regarded as an implementation of one-atom electron source of a new type, based on dielectric coating of emitting tip.



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