| Numéro |
J. Phys. IV France
Volume 06, Numéro C5, Septembre 1996
International Field Emission SocietyIFES'96 Proceedings of the 43rd International Field Emission Symposium |
|
|---|---|---|
| Page(s) | C5-103 - C5-106 | |
| DOI | https://doi.org/10.1051/jp4:1996516 | |
International Field Emission Society
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-103-C5-106
DOI: 10.1051/jp4:1996516
1 Institute of Crystallography, Russian Academy of Sciences, Moscow 117334, Russia
2 Institute of Nuclear Physics, Moscow State University, Moscow 119899, Russia
© EDP Sciences 1996
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-103-C5-106
DOI: 10.1051/jp4:1996516
Field Emission from As-Grown and Ion-Beam-Sharpened Diamond Particles Deposited on Silicon Tips
A.N. Stepanova1, V.V. Zhirnov1, L.V. Bormatova1, E.I. Givargizov1, E.S. Mashkova2 and V.A. Molchanov21 Institute of Crystallography, Russian Academy of Sciences, Moscow 117334, Russia
2 Institute of Nuclear Physics, Moscow State University, Moscow 119899, Russia
Abstract
Ion-beam bombardment/milling was used for sharpening of diamond particles deposited on ends of silicon tips. Radii curvature of diamond coating down to about 20 nm have been formed in such a way. Field emission experiments with sharpened diamond coated emitters have shown that the ion beam treatment effects a considerable shift of current-voltage characteristics of in the lower voltage region.
© EDP Sciences 1996