Numéro
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
Page(s) C3-265 - C3-270
DOI https://doi.org/10.1051/jp4:1996340
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-265-C3-270

DOI: 10.1051/jp4:1996340

Structural Characterization of Thin Films and Multilayer Structures

K. Temst1, M.J. Van Bael1, M. Baert1, E. Rosseel1, V. Bruyndoncx1, C. Strunk1, G. Verbanck1, K. Mae1, C. Van Haesendonck1, V.V. Moshchalkov1, Y. Bruynseraede1, R. Jonckheere2, D.G. de Groot3, N. Koeman3 and R. Griessen3

1  Laboratorium voor Vaste-Stoffysica en Magnetisme, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium
2  IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
3  Faculteit Natuurkunde en Sterrenkunde, Vrije Universiteit Amsterdam, De Boelelaan 1081, 1081 HV Amsterdam, The Netherlands


Abstract
Atomic force microscopy has been used to study the structure, down to the nanoscale, of thin-film and multilayer samples. Due to the fact that atomic force microscopy is not restricted to conducting surfaces, it is possible to image mesoscopic rings, lines, and more complex structures deposited on insulating substrates. X-ray diffraction provides access to the internal structure of the layers, interface roughness and the lateral periodicity of antidot lattices. Comparison of atomic force microscopy and x-ray diffraction on molecular beam epitaxy grown Nb/Cu multilayers shows that high-angle diffraction averages over a lateral length which is in good agreement with the typical grain size.



© EDP Sciences 1996