| Numéro |
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-61 - C3-66 | |
| DOI | https://doi.org/10.1051/jp4:1996309 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-61-C3-66
DOI: 10.1051/jp4:1996309
1 LPCS/ENSERG-INPG (URA CNRS), BP 257, 38016 Grenoble, France
2 IMO, EPFL, 1015 Lausanne, Switzerland
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-61-C3-66
DOI: 10.1051/jp4:1996309
Gate and Substrate Currents in Deep Submicron MOSFETs
B. Szelag1, F. Balestra1, G. Ghibaudo1 and M. Dutoit21 LPCS/ENSERG-INPG (URA CNRS), BP 257, 38016 Grenoble, France
2 IMO, EPFL, 1015 Lausanne, Switzerland
Without abstract
© EDP Sciences 1996
Première page de l'article
