Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-465-C5-472
DOI: 10.1051/jphyscol:1995553

Nickel Thin Films Grown by MOCVD Using Ni(dmg)₂ as Precursor

M. Becht¹, J. Gallus², M. Hunziker², F. Atamny³ and K.-H. Dahmen<sup>4

1</sup>  Superconductivity Research Laboratory (SRL), 10-13 1-chome. Shinonome Koto-ku. Tokyo 135, Japan
²  Federal Institute of Technology, Department of Inorganic Chemistry, Universitätsstrasse 6, 8092 Zürich, Switzerland
³  Federal Institute of Technology, Department of Chemical Engineering and Industrial Chemistry, Universitätststr. 6, 8092 Zürich, Switzerland
⁴  The Florida State University, Department of Chemistry, Tallahassee, Florida 32306-3006, U.S.A.

Abstract
The aim of this study was (i) to investigate alternatives to the very toxic Ni(CO)₄, (ii) optimization of the parameters for Ni film growth, and (iii) characterization of the film morphology. The thermal behaviour of the precursors bis(dimethylglyoximato)Ni(II), [Ni(dmg)₂], bis(2,2,6,6-tetramethyl-3,5-heptandionato)Ni(II), [Ni(thd)₂], N,N'-ethylenebis(2,4-pentandioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2-en-4-onato)Ni(II), [Ni(apo)₂] were investigated in a model reactor. Furthermore, the evaporation rates of these compounds were determined. Metallic nickel films were obtained using Ni(dmg)₂ as precursor. The deposition was carried out in a horizontal quartz reactor at reduced pressure in a hydrogen/helium atmosphere. The films were analysed by profilometry, X-ray diffraction, atomic force microscopy (AFM), fourpoint resistivity measurements and electron spectroscopy for chemical analysis (ESCA). Comparison of the AFM and ESCA data with the electrical resistances resulted in a two layer film model.

© EDP Sciences 1995