J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-291 - C5-298|
J. Phys. IV France 05 (1995) C5-291-C5-298
Low Pressure CVD of Silicon Nitride from a Silane-Ammonia Mixture : Analysis of Preliminary Experimental and Simulation ResultsK. Yacoubi, C. Azzaro and J.P. Couderc
ENSIGC INPT, Laboratoire de Génie Chimique, URA 192 du CNRS, 18 Chemin de la Loge, 31078 Toulouse cedex, France
Results of a study dealing with the deposition of silicon nitride from a silane-ammonia mixture and combining experimental approach and deposition modelling are presented. First, a thorough QRKK analysis has compensated for the lack of kinetic information in the gas phase. A reduced reaction set reproducing the essential features of the full mechanism and involving 6 species including two silylamine intermediates SiH3NH2 and SiHNH2 has been identified. A local two-dimensional model previously developed in our laboratory has then been adapted to the treatment of silicon nitride deposition. The identification of the kinetic parameters of the heterogeneous mechanism has been achieved through a combined approach of experimental and simulation results.
© EDP Sciences 1995