J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-261 - C5-268|
J. Phys. IV France 05 (1995) C5-261-C5-268
Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel ReactorsM. Masi, S. Fogliani and S. Carrà
Dipartimento di Chimica Applicata - Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
the epitaxial silicon chemical vapor deposition by SiCl4/H2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bel1 diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.
© EDP Sciences 1995