J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-253 - C5-260|
J. Phys. IV France 05 (1995) C5-253-C5-260
Simulation of Chemical Vapour Deposition of SiC from Methyltrichlorosilane in a Hot Wall ReactorD. Neuschütz, M. Schierling and S. Zimdahl
Lehrstuhl für Theoretische Hüttenkunde, RWTH Aachen, 52066 Aachen, Germany
A two-dimensional simulation for the deposition of SiC from gas mixtures containing MTS-H2-HCl-Ar was set up on the basis of the commercial CFD-code PHOENICS (1.6.6). Previously measured rate equations  that describe the deposition reaction were implemented. Allowing deposition on all surfaces in the reactor the model takes into account the influence of local depletion of MTS and enrichment of HCl during deposition also upstream of the substrate. In the range from 800 to 1400 °C the calculated total mass increase rates on the substrate as a function of temperature, partial pressure and flow rate show good agreement with experiments. The simulation model was then used to calculate local deposition rates with the aim of finding suitable conditions to produce uniform layer thickness.
© EDP Sciences 1995