Numéro
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-1133 - C5-1139
DOI https://doi.org/10.1051/jphyscol:19955134
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-1133-C5-1139

DOI: 10.1051/jphyscol:19955134

Comparison Between CVD and ALE Produced TiO2 Cathodes in Zn/(PEO)4ZnCl2/TiO2,SnO2 or ITO Galvanic Cells

A. Turkovic1, A. Drasner1, D. Sokcevic1, M. Ritala2, T. Asikainen2 and M. Leskelä2

1  Ruder Boskovic Institute, P.O. Box 1016, 41001 Zagreb, Croatia
2  Department of Chemistry, University of Helsinki, P.O. Box 55, 00014 Helsinki, Finland


Abstract
The way of preparation of thin films of TiO2 is extremely important regarding its application in electronic and optoelectronic devices. We have assembled Zn/(PEO)4ZnCl2/TiO2,SnO2 or ITO rechargeable galvanic cells using CVD (chemical vapour deposition) or ALE (atomic layer epitaxy) produced TiO2 cathodes. The charge-discharge cycles were measured with a constant current in the range of 10-6 to 10-5 A for different cells. It was shown that CVD prepared TiO2 cathode is increasing capacity of the cell by allowing higher constant currents to be applied to the cell. The complex impedance measurements of the electrolyte (PEO)4ZnCl2 have been performed in the range of 1 Hz to 1 MHz and in the temperature range from 290 to 400 K by applying Zn or Sn electrodes.



© EDP Sciences 1995