| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C5-1021 - C5-1027 | |
| DOI | https://doi.org/10.1051/jphyscol:19955120 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-1021-C5-1027
DOI: 10.1051/jphyscol:19955120
1 Department of Chemistry, University of Helsinki, P.O. Box 55, 00014 Helsinki, Finland
2 Materials Research Centre, Åbo Akademi University, 20520 Turku, Finland
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-1021-C5-1027
DOI: 10.1051/jphyscol:19955120
Atomic Layer Epitaxy Growth of AIN Thin Films
K.-E. Elers1, M. Ritala1, M. Leskelä1 and L.-S. Johansson21 Department of Chemistry, University of Helsinki, P.O. Box 55, 00014 Helsinki, Finland
2 Materials Research Centre, Åbo Akademi University, 20520 Turku, Finland
Abstract
AIN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl3 and NH3 as precursors. A growth rate of 1.0 Å/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.
© EDP Sciences 1995