Numéro
J. Phys. IV France
Volume 04, Numéro C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
Page(s) C9-269 - C9-272
DOI https://doi.org/10.1051/jp4:1994947
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation

J. Phys. IV France 04 (1994) C9-269-C9-272

DOI: 10.1051/jp4:1994947

Deep etch lithography at LURE-D.C.I. storage ring

S. Megtert1, A. Labèque1, Liu Zewen1, H. Dexpert1, R. Comès1, F. Rousseaux2, M.F. Ravet2, H. Launois2, S. Ballandras3, W. Daniau3, S. Basrour3, M. Rouillay3, P. Blind4 and D. Hauden3

1  Laboratoire LURE, CNRS, Bât. 2090, Université Paris-Sud, 91405 Orsay cedex, France
2  Laboratoire de Microstructures et Microélectronique, L2M/CNRS, 196 Avenue Henri Ravera, 92225 Bagneux, France
3  Laboratoire LPMO/CNRS32, Rue de l'Observatoire, 25000 Besançon, France
4  Cetehor, 39 Rue dr l'Observatoire, BP. 1145, 25003 Besançon, France


Abstract
LIGA technique has proved to be a powerful tool for micro-fabrication mass production. French laboratories (LURE, L2M, LPMO) gathered to introduce this new technology at LURE facilities. In this paper are described the different steps of the deep etch lithography process including mask realization and first pseudo-tridimensional resist structures are shown.



© EDP Sciences 1994