Numéro |
J. Phys. IV France
Volume 04, Numéro C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
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Page(s) | C9-269 - C9-272 | |
DOI | https://doi.org/10.1051/jp4:1994947 |
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
J. Phys. IV France 04 (1994) C9-269-C9-272
DOI: 10.1051/jp4:1994947
1 Laboratoire LURE, CNRS, Bât. 2090, Université Paris-Sud, 91405 Orsay cedex, France
2 Laboratoire de Microstructures et Microélectronique, L2M/CNRS, 196 Avenue Henri Ravera, 92225 Bagneux, France
3 Laboratoire LPMO/CNRS32, Rue de l'Observatoire, 25000 Besançon, France
4 Cetehor, 39 Rue dr l'Observatoire, BP. 1145, 25003 Besançon, France
© EDP Sciences 1994
J. Phys. IV France 04 (1994) C9-269-C9-272
DOI: 10.1051/jp4:1994947
Deep etch lithography at LURE-D.C.I. storage ring
S. Megtert1, A. Labèque1, Liu Zewen1, H. Dexpert1, R. Comès1, F. Rousseaux2, M.F. Ravet2, H. Launois2, S. Ballandras3, W. Daniau3, S. Basrour3, M. Rouillay3, P. Blind4 and D. Hauden31 Laboratoire LURE, CNRS, Bât. 2090, Université Paris-Sud, 91405 Orsay cedex, France
2 Laboratoire de Microstructures et Microélectronique, L2M/CNRS, 196 Avenue Henri Ravera, 92225 Bagneux, France
3 Laboratoire LPMO/CNRS32, Rue de l'Observatoire, 25000 Besançon, France
4 Cetehor, 39 Rue dr l'Observatoire, BP. 1145, 25003 Besançon, France
Abstract
LIGA technique has proved to be a powerful tool for micro-fabrication mass production.
French laboratories (LURE, L2M, LPMO) gathered to introduce this new technology at LURE facilities. In this paper are described the different steps of the deep etch lithography process including mask realization and first pseudo-tridimensional resist structures are shown.
© EDP Sciences 1994