| Numéro |
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-141 - C7-144 | |
| DOI | https://doi.org/10.1051/jp4:1994734 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-141-C7-144
DOI: 10.1051/jp4:1994734
Photothermal and Optoelectronic Diagnostics Laboratory, Department of Mechanical Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 1A4
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-141-C7-144
DOI: 10.1051/jp4:1994734
Quantitative photomodulated thermoreflectance studies of germanium and silicon semiconductors
R.E. Wagner and A. MandelisPhotothermal and Optoelectronic Diagnostics Laboratory, Department of Mechanical Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 1A4
Abstract
The frequency response of the photomodulated thermoreflectance (PMTR) signal has been used to characterize various semiconductor samples, including crystalline Ge/Si, ion-implanted Ge, and amorphous Si. Theoretical modelling has allowed the deconvolution of electron-hole plasma- and thermal-wave contributions to the signal throughout the entire frequency range.
© EDP Sciences 1994