| Numéro |
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-145 - C7-149 | |
| DOI | https://doi.org/10.1051/jp4:1994735 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-145-C7-149
DOI: 10.1051/jp4:1994735
1 Friedrich-Schiller-University, IFK, Helmholtzweg 5, 07745 Jena, Germany
2 Jenawave Engn. & Consult., Friedrich-Schelling-Str. 11, 07745 Jena, Germany
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-145-C7-149
DOI: 10.1051/jp4:1994735
Measurement of surface recombination of excess carriers by use of the double modulation technique
S. Käpplinger1, F. Buchmann1 and H.D. Geiler21 Friedrich-Schiller-University, IFK, Helmholtzweg 5, 07745 Jena, Germany
2 Jenawave Engn. & Consult., Friedrich-Schelling-Str. 11, 07745 Jena, Germany
Abstract
The well characterized (100)-Si surface subjected to low energy ion irradiation is used to demonstrate the capability of the contactless measurement of the surface recombination velocity of excess carriers by applying the photothermal response technique under high vacuum conditions. During and after the processing the photothermal response is recorded in the frequency domain. From the wide range frequency sweep surface recombination velocities between 1 m/s up to 1000 m/s can be extracted.
© EDP Sciences 1994