| Numéro |
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-125 - C7-128 | |
| DOI | https://doi.org/10.1051/jp4:1994730 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-125-C7-128
DOI: 10.1051/jp4:1994730
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10124 Turin, Italy
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-125-C7-128
DOI: 10.1051/jp4:1994730
The optical response above the band gap of light emitting porous silicon, as investigated by photoacoustic spectroscopy
G. Amato, G. Spagnolo, L. Boarino, R. Gavioso and G. BenedettoIstituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10124 Turin, Italy
Abstract
Photoacoustic Spectroscopy (PAS) has been performed on Porous Silicon Layers
(PSL) obtained by chemical and electrochemical etching of crystalline Silicon. In the investigated
energy range (2.0eV-4.7eV) the samples behave as optically opaque and show strong light
scattering properties so to prevent the application of standard reflectivity/trasmission techniques.
PAS proves suitable in studying porous media, providing evidence that PSLs retain the original
cristallinity. The presence of native oxides on PSLs has been revealed by PAS.
© EDP Sciences 1994