8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP³ / 8éme conférence internationale de photoacoustique et photothermique

J. Phys. IV France 04 (1994) C7-129-C7-132
DOI: 10.1051/jp4:1994731

Optical fundamental band-gap energy of semiconductors by photoacoustic spectroscopy

J. Caetano de Souza¹, A. Ferreira da Silva² and H. Vargas<sup>3

1</sup>  Instituto de Física, Universidade Federal da Bahia, Campus da Federação, 40210-340 Salvador, Bahia, Brazil and Hospital São Rafael, Av. São Rafael, 2152 São Marcos, 41200 Salvador, Bahia, Brazil
²  Instituto de Física, UFBA, Campus da Federação, 40210-340 Salvador, Bahia, Brazil and Laboratório Associado de Sensores e Materiais - LAS/INPE, C.P. 515, 12201-970, São José dos Compos, SP, Brazil
³  Departamento de Física, Centro de Investigación y Estudos Avanzados del IPN, A.P. 14-740, México D.F. 070000, México and Instituto de Física, UNICAMP, C.P. 6165, 13081-970 Campinas, SP, Brazil

Abstract
The optical band-gap energy of the semiconductors GaAs, CdSe, Cds, ZnSe and Si doped with P at a concentration of 4 x 10¹⁸cm^-3, are obtained by photoacoustic spectroscopy technique. Excellent agreements are found with the values recorded in the literature.

© EDP Sciences 1994