Collapse and large signal modelling of GaAs field effect transistors at 77 K

J. Verdier; O. Llopis; J.M. Dienot; R. Plana; Ph. Andre; J. Graffeuil

doi:doi:10.1051/jp4:1994626

Numéro		J. Phys. IV France Volume 04, Numéro C6, Juin 1994 WOLTE 1 Proceedings of the First European Workshop on Low Temperature Electronics


Page(s)		C6-165 - C6-170
DOI		https://doi.org/10.1051/jp4:1994626

WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics

J. Phys. IV France 04 (1994) C6-165-C6-170
DOI: 10.1051/jp4:1994626

Collapse and large signal modelling of GaAs field effect transistors at 77 K

J. Verdier¹, O. Llopis¹, J.M. Dienot², R. Plana², Ph. Andre¹ and J. Graffeuil²

¹ LAAS-CNRS, 7 av. du Colonel Roche, 31077 Toulouse, France
² Université Paul Sabatier, 118 rte de Narbonne, 31062 Toulouse, France

Abstract
A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is performed. The trapping-detrapping mechanisms on deep levels are particularly adressed and a method is proposed to circumvent the collapse phenomenon which otherwise limits the electrical performances. From these measurements a HEMT non-linear model is extracted and is found efficient for the prediction of the large signal power out versus power in characteristic of a cooled HEMT. A further application could be the optimized design of a cooled low phase noise oscillator.