| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-117 - C6-122 | |
| DOI | https://doi.org/10.1051/jp4:1994618 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-117-C6-122
DOI: 10.1051/jp4:1994618
1 Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, Auburn, Alabama 36849-5201, U.S.A.
2 IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-117-C6-122
DOI: 10.1051/jp4:1994618
High-injection barrier effects in SiGe HBTs operating at cryogenic temperatures
J.D. Cressler1, D.M. Richey1, R.C. Jaeger1, E.F. Crabbé2, J.H. Comfort2 and J.M.C. Stork21 Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, Auburn, Alabama 36849-5201, U.S.A.
2 IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
Abstract
We demonstrate that high-injection barrier effects associated with the collector-base silicon-germanium (SiGe) to silicon (Si) heterojunction are an important design constraint for SiGe heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. Due to its thermally activated nature, these barrier effects can have important dc and ac consequences at cryogenic temperatures even when undetectable under room temperature operation. We use measured results from advanced SiGe HBTs and Si BJTs over a wide temperature range, in combination with simulation, to shed light on the design issues associated with these high-injection barrier phenomena.
© EDP Sciences 1994