| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-87 - C6-91 | |
| DOI | https://doi.org/10.1051/jp4:1994614 | |
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-87-C6-91
DOI: 10.1051/jp4:1994614
Si vertical JFET at low temperatures ; I-V characteristics and low frequency noise
J.A. Chroboczek1, A. Granier1, R. Plana2 and J. Graffeuil21 France Telecom, Centre National d'Etudes des Télécommunications, BP. 98, 38243 Meyan, France
2 Laboratoire d'Automatique et d'Analyse des Systèmes, CNRS and Université Paul Sabatier, 7 Avenue Colonel Roche, 31077 Toulouse, France
Abstract
Measurements of the source to drain current/voltage, Id(Vds), characteristics and low frequency (f < 100kHz) noise spectral density function, SV(f), were carried out at 77K < T < 300K on the vertical JFET (BiCMOS-compatible technology). We found that Id(Vds) characteristics do not significantly depend on T, down to 100K, thus low temperature applications of the device are plausible. At f < 10kHz, SV(f) was found to be dominated by the 1/f component. At low T, SV(f) shows features characteristic for the generation-recombination process, which become stronger at large and negative gate bias polarizations. This suggests that the recombination centers are localized at the interface between the channel and the depletion region near the gate.
© EDP Sciences 1994