DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures

Abstract
This paper describes the static I-V characteristics at cryogenic temperatures (77 K and 4.2 K) of so-called dual-gate Silicon-on-Insulator (SOI) MOSFETs, fabricated in the Gate-all-Around (GAA) technology. The n-channel devices are characterised by an increase of the threshold voltage and the transconductance upon cooling, which is observed both for the edgechannel component and for the primary drain current. It is shown that the devices suffer less from the hysteresis and transient effects, which have been reported before in standard SOI transistors. For the first time, the occurrence of the back-gate induced Multistable-Charge-Controlled-Memory (MCCM) effect in GAA devices is demonstrated at 4.2 K. The p-channel devices on the other hand show specific instabilities at deep cryogenic temperatures, which are related to the unexpected reduction of |V_T|.