| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-43 - C6-48 | |
| DOI | https://doi.org/10.1051/jp4:1994607 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-43-C6-48
DOI: 10.1051/jp4:1994607
1 Electrical Engineering Department, University of California, Los Angeles, California, 90024, U.S.A.
2 Hughes Aircraft Company, El Segundo, California, U.S.A.
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-43-C6-48
DOI: 10.1051/jp4:1994607
Low temperature low frequency noise in oxide and reoxidized-nitrided oxide films
R. Divakaruni1, R. Peterson2, S. Nystrom2 and C.R. Viswanathan11 Electrical Engineering Department, University of California, Los Angeles, California, 90024, U.S.A.
2 Hughes Aircraft Company, El Segundo, California, U.S.A.
Abstract
The reliability of oxide and reoxidized-nitrided oxide (RNO) gate dielectrics was examined by comparing the low frequency noise characteristics at low temperature of p-channel devices before and after positive F-N stress. The RNO devices were found to have a better noise performance after F-N stress and were also found to have less interface state generation due to the warm-up process. However, the creation of negative fixed charge in RNO devices has a severe effect on the threshold voltage.
© EDP Sciences 1994