| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-3 - C6-12 | |
| DOI | https://doi.org/10.1051/jp4:1994601 | |
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-3-C6-12
DOI: 10.1051/jp4:1994601
Temperature scaling concept of MOSFET
K. Masu and K. TsubouchiResearch Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980, Japan
Abstract
Lowering both the threshold voltage (Vth) and subthreshold swing (S) at the same time is essentially required for 0.1µm and below 0.1µm MOSFETs with low supply voltage. In this paper, we discuss a temperature scaling concept of MOSFET and the device characteristics of the fabricated 77K MOSFETs. In the temperature scaling concept, the physical quantities relating to potential are scaled with operation temperature, while the dimensional quantities are constant. The distribution of mobile carrier concentration are kept constant. In order to design 0.1µm MOSFET with low supply voltage, we proposed the temperature-dimension combination scaling theory (CST). The 77K MOSFET with supply voltage of 1-V has been designed from a 300K parent device on the basis of the combination scaling theory. The fabricated 77K-CST 0.18µm MOSFET has exhibited fully scaled characteristics. The subthreshold swing (S) and the threshold voltage (Vth) of this device is achieved to be 27mV/dec and 0.21V without degradation of S and Vth due to the short-channel-effects degradation.
© EDP Sciences 1994