| Numéro |
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
|
|
|---|---|---|
| Page(s) | C5-283 - C5-287 | |
| DOI | https://doi.org/10.1051/jp4:1993556 | |
Third International Conference on Optics of Excitons in Confined
Le Journal de Physique IV 03 (1993) C5-283-C5-287
DOI: 10.1051/jp4:1993556
1 Centro Nacional de Microelectrónica, CSIC, Serrano 144, 28006 Madrid, Spain
2 Instituto de Ciencia de Materiales, CSIC, Serrano 123, 28006 Madrid, Spain
© EDP Sciences 1993
Le Journal de Physique IV 03 (1993) C5-283-C5-287
DOI: 10.1051/jp4:1993556
Excitons in {311} oriented superlattices: optical anisotropies
G. ARMELLES1, P. CASTRILLO1, P.S. DOMÍNGUEZ1, L. GONZÁLEZ1, A. RUIZ1, D.A. CONTRERAS2, V.R. VELASCO2 and F. GARCÍA-MOLINER21 Centro Nacional de Microelectrónica, CSIC, Serrano 144, 28006 Madrid, Spain
2 Instituto de Ciencia de Materiales, CSIC, Serrano 123, 28006 Madrid, Spain
Abstract
The optical response of excitons in (311) oriented GaAs/AlAs superlattices grown by atomic layer molecular beam epitaxy at low substrate temperature is studied by piezoreflectance. Several transitions are detected showing heavy hole and light hole character. The heavy hole transitions are more polarized along the [(-2)33] direction whereas the light hole ones are more polarized along the [01(-1)] direction. According to the calculation based on an empirical tight binding model, the observed optical anisotropy is related to the different components of the superlatices valence band wave functions.
© EDP Sciences 1993