| Numéro |
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C3-485 - C3-491 | |
| DOI | https://doi.org/10.1051/jp4:1993367 | |
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
J. Phys. IV France 03 (1993) C3-485-C3-491
DOI: 10.1051/jp4:1993367
Laboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, BP. 46, 38402 Saint-Martin d'Hères, France
© EDP Sciences 1993
J. Phys. IV France 03 (1993) C3-485-C3-491
DOI: 10.1051/jp4:1993367
Deposition conditions for the growth of textured ZnO thin films by aerosol CVD process
J.-L. DESCHANVRES, B. BOCHU and J.-C. JOUBERTLaboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, BP. 46, 38402 Saint-Martin d'Hères, France
Abstract
The crystalline orientation of ZnO thin films deposited by an aerosol CVD process is studied with regard to the experimental conditions. The quality of the C-axis oriented growth depended on the substrate temperature, on the deposition rate and also on the hygrometric degree of the carrier gas. The quality of the gold sublayer influenced also the quality of the ZnO textured growth. Under a dry gas mixture N2-O2 at 495°C and with a deposition rate of 35Å/mn, the texture ratio was less than -3.5 and the misorientation σ002 was less than 1.6°.
© EDP Sciences 1993