J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-449 - C3-456
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-449-C3-456

DOI: 10.1051/jp4:1993362

Silicon atomic layer growth using flash heating in CVD


Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan

Si atomic layer growth on Si was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment of SiH4 or Si2H6 gas. In the case of SiH4, about 0.4 atomic layer deposition per single flash light shot was observed on Si(100) at a substrate temperature of 385°C and at a SiH4 partial pressure of 500Pa. The adsorption process of SiH4 can be explained quantitatively by Langmuir-type adsorption model, assuming that the total adsorption site density is equal to the surface atom density. It was found that the amount of adsorbed SiH4 molecules is determined by the balance between adsorption and desorption of SiH4. In the case of Si2H6, sub-monolayer growth of Si was observed at a substrate temperature of 320°C and under Si2H6 partial pressure of 300Pa. From the RHEED observation, epitaxial growth of Si films on Si(100) was confirmed to be realized at low temperatures such as 385°C and 320°C by using SiH4 and Si2H6, respectively, and the surface flatness of the deposited films was as good as that of the initial surface.

© EDP Sciences 1993