Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-147-C3-154
DOI: 10.1051/jp4:1993318

Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb)

A. HAIDOUX¹, P. TOMASINI¹, M. MAURIN¹, J.C. TEDENAC¹, D. COQUILLAT², A. RIBAYROL², J.P. LASCARAY², D. BOUCHARA², A. ABOUNADI², J. CALAS² and B. DUCOURANT<sup>3

1</sup>  Laboratoire de Physicochimie des Matériaux Solides, URA CNRS 407, Université de Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05, France
²  Groupe d'Etude des Semiconducteurs, URA CNRS 357, Université de Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05, France
³  Laboratoire des Agrégats Moléculaires et des Matériaux Inorganiques, Université de Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05, France

Abstract
Epitaxial ZnSe, ZnTe and multilayers have been grown on III-V (InP, GaAs and GaSb) substrates by organometallic vapor phase epitaxy. First, the OMVPE growth technique used is described. The microstructural quality of the epilayers was determined by SEM (EDX) and X-Ray diffraction. Mechanichal strain, due firstly to a mismatch between II-VI layers and III-V substrates and secondly to different thermal expansion coefficients is studied. Reflectivity and photoluminescence spectra are presented for one type of material. Growth parameters are identified and problems associated to experimental conditions are discussed.

© EDP Sciences 1993