| Numéro |
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C3-35 - C3-42 | |
| DOI | https://doi.org/10.1051/jp4:1993304 | |
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
J. Phys. IV France 03 (1993) C3-35-C3-42
DOI: 10.1051/jp4:1993304
Laboratoire de Génie Chimique, URA 192 du CNRS, ENSIGC/INPT, 18 chemin de la Loge, 31078 Toulouse cedex, France
© EDP Sciences 1993
J. Phys. IV France 03 (1993) C3-35-C3-42
DOI: 10.1051/jp4:1993304
On the behavior of rapid thermal CVD reactors
S. AIT AMER, S. MAGNAUDEIX and P. DUVERNEUILLaboratoire de Génie Chimique, URA 192 du CNRS, ENSIGC/INPT, 18 chemin de la Loge, 31078 Toulouse cedex, France
Abstract
Two mathematical models are developed and applied to RTCVD reactors. They involve the resolution of momentum, heat and mass transfer equations with homogeneous and heterogeneous chemical reactions. A detailed discussion about the effects of some physical parameters is undertaken so that a fundamental understanding of gas flow patterns and the contribution of each chemical species to the deposition of polysilicon is obtained.
© EDP Sciences 1993