Modelling of CVD reactors : thermochemical and mass transport approaches for Si1-xGex deposition

H. ROUCH; M. PONS; A. BENEZECH; J.N. BARBIER; C. BERNARD; R. MADAR

doi:doi:10.1051/jp4:1993302

Numéro		J. Phys. IV France Volume 03, Numéro C3, Août 1993 Proceedings of the Ninth European Conference on Chemical Vapour Deposition


Page(s)		C3-17 - C3-23
DOI		https://doi.org/10.1051/jp4:1993302

Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-17-C3-23
DOI: 10.1051/jp4:1993302

Modelling of CVD reactors : thermochemical and mass transport approaches for Si_1-xGe_x deposition

H. ROUCH¹, M. PONS², A. BENEZECH², J.N. BARBIER³, C. BERNARD³ and R. MADAR¹

¹ LMGP/ENSPG/INPG, Domaine Universitaire, BP. 46, 38402 Saint-Martin d'Hères, France
² S2MC/ENSEEG/INPG, Domaine Universitaire, BP. 75, 38402 Saint-Martin d'Hères, France
³ LTPCM/ENSEEG/INPG, Domaine Universitaire, BP. 75, 38402 Saint-Martin d'Hères, France

Abstract
Over the years, the design of chemical vapor deposition processes has relied on accumulated empirical ability. It is now well established that the properties of films grown by this chemical process are strongly determined by both transport phenomena and homogeneous and heterogeneous reactions in the reactor. Thermodynamic calculations and mass transport modeling provide a possible approach to delineate the general features of a given process. The application of this concept to the deposition of Si_1-xGe_x alloys has led to a better knowledge of the physicochemical phenomena involved in the growth of these materials.