| Numéro |
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic CrystalsECRYS - 93 |
|
|---|---|---|
| Page(s) | C2-171 - C2-174 | |
| DOI | https://doi.org/10.1051/jp4:1993234 | |
International Workshop on Electronic Crystals
ECRYS - 93
J. Phys. IV France 03 (1993) C2-171-C2-174
DOI: 10.1051/jp4:1993234
1 Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, U.S.A.
2 School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, U.S.A.
© EDP Sciences 1993
ECRYS - 93
J. Phys. IV France 03 (1993) C2-171-C2-174
DOI: 10.1051/jp4:1993234
Charge-density-wave phase slip in NbSe3
M.P. MAHER1, S. RAMAKRISHNA1, D.A. DI CARLO1, TL. ADELMAN1, V. AMBEGAOKAR1, J.D. BROCK2 and R.E. THORNE11 Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, U.S.A.
2 School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, U.S.A.
Abstract
We have studied the phase-slip process by which charge-density-wave (CDW) current is converted to single-particle current at electrical contacts. Transport and X-ray scattering measurements indicate that an excess voltage Vps dropped between current contacts induces a large static deformation of the CDW phase. The measured Vps - and temperature-dependent phase-slip rates are consistent with a model in which CDW dislocation loops are thermally nucleated in the presence of these deformations. The effects of impurities and contact perturbations on the phase slip process are also discussed.
© EDP Sciences 1993