| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-335 - C6-336 | |
| DOI | https://doi.org/10.1051/jp4:1991649 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-335-C6-336
DOI: 10.1051/jp4:1991649
IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 11-15, D-3400 Göttingen and Sonderforschungsbereich 345 Göttingen, Germany
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-335-C6-336
DOI: 10.1051/jp4:1991649
CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS
U. GNAUERT, J. KRONEWITZ, M. SEIBT and W. SCHRÖTERIV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 11-15, D-3400 Göttingen and Sonderforschungsbereich 345 Göttingen, Germany
Without abstract
© EDP Sciences 1991
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