| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-231 - C6-236 | |
| DOI | https://doi.org/10.1051/jp4:1991636 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-231-C6-236
DOI: 10.1051/jp4:1991636
Laboratoire de Physique du Solide, C.N.R.S - E.S.P.C.I., 10 rue Vauquelin, F-75231 Paris Cedex, France
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-231-C6-236
DOI: 10.1051/jp4:1991636
ELECTRICAL ACTIVITY OF Al DOPED SILICON ∑ 9 BICRYSTAL BY S.T.E.B.I.C.
T. BENABBAS and J.-Y. LAVALLaboratoire de Physique du Solide, C.N.R.S - E.S.P.C.I., 10 rue Vauquelin, F-75231 Paris Cedex, France
Abstract
The influence of aluminium on the electrical properties of silicon bicrystals was analyzed and related to the interaction between impurities and defects. A p-type silicon ∑ 9 symmetrical tilt bicrystal, with a chemical gradient in aluminium was grown by a directional solidification method. The combination of electrical, chemical and structural local information, with high spatial resolution enabled the electrical activity to be correlated to the cristallochemistry of the boundary. It was shown that the recombining activity depends on the localization and environment of aluminium.
© EDP Sciences 1991