CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES

M. SARRET; A. LIBA; O. BONNAUD; M. MOKHTARI; B. FORTIN

doi:doi:10.1051/jp4:1991296

Numéro		J. Phys. IV France Volume 02, Numéro C2, Septembre 1991 Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse


Page(s)		C2-817 - C2-822
DOI		https://doi.org/10.1051/jp4:1991296

Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-817-C2-822
DOI: 10.1051/jp4:1991296

CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES

M. SARRET, A. LIBA, O. BONNAUD, M. MOKHTARI and B. FORTIN

Groupe de Microélectronique et Visualisation, Laboratoire de Microélectronique, Centre Commun de Microélectronique de l'Ouest, Université de Rennes I, Campus de Beaulieu, F-35042 Rennes cedex, France

Abstract
In order to obtain low in-situ phosphorus doped LPCVD polysilicon thin films having good conductivity, it is necessary to obtain an amorphous layer which is crystallized after deposition. This condition limits the choice of both temperature and pressure. An appropriate selection of deposition parameters has led to a phosphorus atom incorporation in the range 2 x 10¹⁸ - 2 x 10²⁰ for a phosphine/silane mole ratio in the range 4 x 10^-6 - 4 x 10^-4. With these conditions, the resistivity varies from 1 to 2 x 10^-3 [MATH]cm.