| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-381 - C2-388 | |
| DOI | https://doi.org/10.1051/jp4:1991246 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-381-C2-388
DOI: 10.1051/jp4:1991246
IMP-CNRS, Université de Perpignan, 52 avenue de Villeneuve, F-66860 Perpignan cedex, France
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-381-C2-388
DOI: 10.1051/jp4:1991246
KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD
W. ZHANG, M. LELOGEAIS and M. DUCARROIRIMP-CNRS, Université de Perpignan, 52 avenue de Villeneuve, F-66860 Perpignan cedex, France
Abstract
Silicon carbide deposition in an inductively coupled RF plasma reactor using tetramethysilane(TMS)/argon mixtures was carried out on steel substrates in a restricted range of experimental parameters. A kinetic approach in the pressure range of 0.7-2.4 kPa is made to correlate the deposition rate of silicon carbide with plasma parameters. A "global" or "effective" concept has been emphasized. The main contribution of TMS dissociation in the present pressure range is assumed to the excited Ar(ion and metastable atom)-TMS molecule reactions rather than the primary electron-TMS reactions. A simple analytical expression for deposition rate is deduced which provides a good fit with experiments.
© EDP Sciences 1991