J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-365 - C2-371|
J. Phys. IV France 02 (1991) C2-365-C2-371
PREPARATION OF SiC FILMS BY PHOTOCHEMICAL VAPOUR DEPOSITION USING A D2 LAMPS. MOTOJIMA and S. MANO
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501-11, Japan
SiC films have been prepared by photochemical vapour deposition using a D2 lamp from a gas mixture of CH3SiCl3+H2+Ar on a graphite plate. The deposition temperature of the SiC films of a single phase was lowered by irradiation with a D2 lamp by 50°C as compared to that without irradiation. Furthermore, the deposition rate was increased with irradiation by 1.2-2.8 times as compared to that without irradiation.
© EDP Sciences 1991