| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-311 - C2-317 | |
| DOI | https://doi.org/10.1051/jp4:1991238 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-311-C2-317
DOI: 10.1051/jp4:1991238
Lam Research Corporation, 9250 Trade Place, San Diego, CA 92126, U.S.A
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-311-C2-317
DOI: 10.1051/jp4:1991238
MOCVD OF TANTALUM PENTOXIDE FOR LARGE-AREA ULSI CIRCUIT WAFERS
W. KERN, A. CHEN and N. SANDLERLam Research Corporation, 9250 Trade Place, San Diego, CA 92126, U.S.A
Abstract
Ta2O5 films of 10-150 nm thickness were prepared by oxygen-assisted pyrolytic LPCVD at 450-490°C from tantalum penta ethoxide and O2 with N2 diluent. Silicon wafers 150 mm in diameter were used as substrates with a novel LPCVD reactor. The films were annealed in dry O2 at 700-800°C. Compositional, structural, and electrical evaluations demonstrate that these uniform, pure, and conformal Ta2O5 films are a viable alternative dielectric suitable for advanced megabit DRAM applications.
© EDP Sciences 1991