| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-279 - C2-286 | |
| DOI | https://doi.org/10.1051/jp4:1991234 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-279-C2-286
DOI: 10.1051/jp4:1991234
Laboratoire de Chimie Technique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-279-C2-286
DOI: 10.1051/jp4:1991234
THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER
B. LECOHIER, J.-M. PHILIPPOZ, B. CALPINI, T. STUMM and H. VAN DEN BERGHLaboratoire de Chimie Technique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Abstract
Low pressure CVD of copper from its bis-hexafluoroacetylacetonate is studied on oxidized silicon substrates locally seeded with a 2.5 Å platinum prenucleation film. Copper is deposited selectively on top of the prenucleation layer from the gaseous metalorganic compound diluted in hydrogen. The selectivity, growth rate and resistivity of the copper deposit strongly depend on the presence of water vapor in the reagent gas mixture.
© EDP Sciences 1991